SIA427DJ-T1-GE3

Manufacturer: Siliconix

Category: Electronic Component

Lifecycle Status: ACTIVE

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SIA427DJ-T1-GE3 Technical Specifications

ParameterValue
Grade-
FET TypeP-Channel
Vgs (Max)±5V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / CasePowerPAK® SC-70-6
Vgs(th) (Max) @ Id800mV @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs16mOhm @ 8.2A, 4.5V
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Supplier Device PackagePowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs50 nC @ 5 V
Drain to Source Voltage (Vdss)8 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

About the SIA427DJ-T1-GE3

P-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

SIA427DJ-T1-GE3 is manufactured by Siliconix. Gateway America stocks and sources Siliconix components with full traceability.

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Product Overview

The SIA427DJ-T1-GE3 from Siliconix is a high-quality electronic component available through Gateway America's extensive sourcing network.

Description

OEM Excess

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