2N7002ET1

Manufacturer: Siliconix

Category: Electronic Component

Lifecycle Status: ACTIVE

Availability and Stock

In Stock: 10,000 units available for immediate shipment.

ISO 9001:2015 Certified. Third Party Testing Available. Same-Day RFQ Response.

2N7002ET1 Technical Specifications

ParameterValue
Grade-
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id2.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs2.5Ohm @ 240mA, 10V
Power Dissipation (Max)300mW (Tj)
Supplier Device PackageSOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs0.81 nC @ 5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds26.7 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C260mA (Ta)

About the 2N7002ET1

N-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

2N7002ET1 is manufactured by Siliconix. Gateway America stocks and sources Siliconix components with full traceability.

Gateway America maintains 10,000 units of 2N7002ET1 in stock with same-day shipping. As an ISO 9001:2015 certified distributor, we provide full traceability and anti-counterfeit testing.

Product Overview

The 2N7002ET1 from Siliconix is a high-quality electronic component available through Gateway America's extensive sourcing network.

Description

SOT-23 - OEM Excess

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